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Motorola Semiconductors - JFET VHF/UHF AMPLIFIER

Numéro de référence MFE2000
Description JFET VHF/UHF AMPLIFIER
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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MFE2000 fiche technique
MFE2000
MFE2001
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vDs
vDg
Vgs
id
pd
TJ. Tst g
Value
25
25
-25
30
300
2.0
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
DC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic.
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
dG = - 1.0 MAdc, V D s = 0)
Gate Reverse Current
(VGS = -20 Vdc, VDS = 0)
(VGS = -20 Vdc, V D S = 0, TA = 150°C)
Gate Source Cutoff Voltage
(Iq = 0.5 mAdc, V D S = 15 Vdc)
ON CHARACTERISTICS
MFE2000
MFE2001
Zero-Gate-Voltage Drain Current
(V DS = 15 Vdc, V GS = 0)
MFE2000
MFE2001
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VdS = 15 Vdc, Vqs = 0, f = 1.0 kHz)
MFE2000
MFE2001
Output Admittance
(VD s = 15 Vdc, V GS = 0, f = 1.0 kHz)
MFE2000
MFE2001
Input Capacitance
(Vqs = 15 Vdc, Vqs = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(Vqs = 15 Vdc, Vqs = 0, f = 1.0 MHz)
Output Capacitance
(Vqs = 15 Vdc, Vqs = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vqs = 15 Vdc, Dl = 4.0 mAdc, f = 100 MHz, Rq = 1.0 k ohm)
(V Ds = 15 Vdc, Dl = 4.0 mAdc, f = 400 MHz, Rq = 1.0 k ohm)
Common Source Power Gain
(V D s = 15 Vdc, Dl = 4.0 mAdc, f = 100 MHz)
(Vqs = 15 Vdc, Iq = 4.0 mAdc, f = 400 MHz)
Symbol
V (BR)GSS
'gss
v GS(off)
'dss
IVfsl
IVosI
Ciss
Crss
C ss
NF
G ps
CASE 20-03, STYLE 1
f0-72 (TO-206AF)
JFET
VHF/UHF AMPLIFIER
N-CHANNEL DEPLETION
Refer to 2N4416 for graphs.
Min
Typ
Max
Unit
-25
Vdc
-- -loo
pAdc
-200
nAdc
Vdc
--0.5
-4.0
-2.0
-6.0
-4.0
mAdc
10
8.0 20
-2500
6000
Aimhos
4000
8000
- - /u.mhos
50
75
— — 5.0 PF
1.0 PF
2.0 PF
- dB
1.6 2.0
3.3 4.0
-18 23
dB
10 14
6-133

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