DataSheetWiki


MMBD101 fiches techniques PDF

Galaxy Microelectronics - Schottky Barrier Diodes

Numéro de référence MMBD101
Description Schottky Barrier Diodes
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





1 Page

No Preview Available !





MMBD101 fiche technique
Production specification
Schottky Barrier Diodes
MMBD101
FEATURES
z Low noise figure -6.0dB @1.0GHz.
Pb
z Surface mount package ideally suited Lead-free
for automatic insertion.
z Very low capacitance –less than 1.0pF @zero volts.
z High forward conductance -0.5volts (typ.) @IF=10mA.
APPLICATIONS
z High speed switching.
SOT-23
ORDERING INFORMATION
Type No.
MMBD101
Marking
4M
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Characteristic
Symbol
DC Reverse Voltage
VR
Power Dissipation
Pd
Operating Junction Temperature Range
Tj
Storage Temperature Range
TSTG
Limits
7.0
225
150
-55 to +150
Unit
V
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Characteristic
Symbol Min. TYP. MAX UNIT Test Condition
Reverse Breakdown Voltage
V(BR)R
7.0 10
V IR=10μA
Forward Voltage
VF
0.5 0.6 V
IF=10mA
Reverse Current IR 0.02 0.25 μA VR=3.0V
Diode Capacitance
CT
0.88 1.0 pF VR=0V,f=1MHz
C132
Rev.A
www.gmicroelec.com
1

PagesPages 3
Télécharger [ MMBD101 ]


Fiche technique recommandé

No Description détaillée Fabricant
MMBD1000LT1 Switching Diode Motorola Semiconductors
Motorola Semiconductors
MMBD1005LT1 Switching Diode Motorola Semiconductors
Motorola Semiconductors
MMBD101 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Pan Jit International
Pan Jit International
MMBD101 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP
WON-TOP

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche