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Digitron Semiconductors - SILICON THYRISTORS

Numéro de référence 2N1595
Description SILICON THYRISTORS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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2N1595 fiche technique
2N1595-2N1599
High-reliability discrete products
and engineering services since 1977
SILICON THYRISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
Ratings
2N1595
2N1596
VRSM(REP)
Peak reverse blocking voltage*
50 100
IT(RMS)
ITSM
PGM
PG(AV)
Forward current RMS (all conduction angles)
Peak surge current (one-cycle, 60Hz,
TJ = -65 to +125°C)
Peak gate power – forward
Average gate power – forward
IGM Peak gate current – forward
VGFM Peak gate voltage – forward
VGRM Peak gate voltage – reverse
TJ Operating junction temperature range
TSTG Storage temperature range
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
2N1597
200
1.6
15
0.1
0.01
0.1
10
10
-65 to +125
-65 to +150
2N1598
300
2N1599
400
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Ratings
2N1595
VDRM
Peak forward blocking voltage*
Min. 50
IRRM
Peak reverse blocking current
(Rated VDRM, TJ = 125°C)
Max.
IDRM
Peak forward blocking current
(Rated VDRM with gate open, TJ = 125°C)
Max.
IGT
Gate trigger current
Anode voltage = 7.0 Vdc, RL = 12Ω
Typ.
Max.
Gate trigger voltage
Typ.
VGT
Anode voltage = 7.0Vdc, RL = 12Ω
Max.
VDRM = rated, RL = 100Ω, TJ = 125°C
Min.
IH
Holding current
Anode voltage = 7.0 Vdc, gate open
Typ.
VTM
Forward on-voltage
IT = 1Adc
Typ.
Max.
tgt
Turn-on time (td+tr)
IGT = 10mA, IT = 1A
Typ.
Turn-off time
tq
IT = 1A, IR = 1A, dv/dt = 20 V/µs,
TJ = 125°C
Typ.
VDRM = rated voltage
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
2N1596
100
2N1597
200
1.0
1.0
2.0
10
0.7
3.0
0.2
5.0
1.1
2.0
0.8
10
2N1598
300
2N1599
400
Unit
V
Amp
Amp
W
W
Amp
V
V
°C
°C
Unit
V
mA
mA
mA
V
mA
V
µs
µs
Rev. 20130116

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