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PDF CV9543 Data sheet ( Hoja de datos )
| Número de pieza | CV9543 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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T
CV9543
(CECC 50004-067)
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ Ta = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
1
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
ic
PD
Tj- stg
Value
20
25
5
100
0.3
2.0
-55 to +175
Refer to 2N3251 for graphs.
ELECTRICAL CHARACTERISTICS <TA
Characteristic
OFF CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
RftJA
25°C unless otherwise noted.)
Symbol
Min
Typ
Max
500
Max
Collector-Emitter Sustaining Voltage(1)
(>C - 10 mA, Ir = 0)
Collector Cutoff Current
(VCB = 20 V, Ir = 0)
(VCB = 25 V, Ir = 0)
Collector Cutoff Current
(VCE = 13 V, Bl = 0, TA
100°C)
Emitter Cutoff Current
(Vcb = 1.5 V,lc = 0)
(VC B = 5 V, Cl = 0)
(VCB = 15 V, Cl = 0, TA
ON CHARACTERISTICS
100°C)
VCEO(sus)
iCBO
20
'CEO
lEBO
50
10
25
10
15
Collector-Emitter Saturation Voltage(1)
PC = 30 mA, Ir = 1.5 mA)
Base-Emitter Saturation Voltage (1)
dC = 10 mA, Bl = 1.0 mA)
dC = 50 mA, Ir = 2.5 mA)
DC Current Gain
(lC = 1 mA, VCE = 0.4 V)
(lC = 10 mA, Vce = 0.4 V)
=(lC = 30 mA, VC e = 0.4 V)
dC 50 mA, VC E = 0.75 V)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
hFE
30
35
20
20
0.4
0.9
1.6
Current Gain Bandwidth Product
dC = 10 mA, VC E = 12 V, f = 20 MHz)
Output Capacitance
(Vcb = 10 V, f = 1 MHz)
Storage Time (See Figure 1)
(lC = 10 mA, Ib 1 = lB2 = 1 mA)
(1) Pulsed: Pulse Duration = 300 us. Duty Cycle = 1%
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
Unit
Vdc
Vdc
Vdc
mAmp
Watt
mW/°C
°C
Unit
°c/w
J
1
Unit
nA
"A
uA
nA
uA
uA
Pulse Generator IB1
-20V tp 5 1,0us
Duty Cycle » 1%
tf of Generator ^ 5ns
4-256
O Oscilloscope
ze* IMa
1 page | ||
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