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MCR100-4 fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence MCR100-4
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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MCR100-4 fiche technique
MCR100 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
VDRM
VRRM
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
0.8
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 25°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 10
A
I2t 0.415 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C)
PGM 0.1
W
Forward average gate power (t = 8.3ms, TA = 25°C)
Forward peak gate current (pulse width ≤ 1.0µs, TA = 25°C)
Reverse peak gate voltage (pulse width ≤ 1.0µs, T A = 25°C)
PG(AV)
IGM
VGRM
0.10
1.0
5.0
W
A
V
Operating junction temperature range @ rated VRRM and VDRM
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length < 1/16” from case, 10s max)
Symbol
RӨJC
RӨJA
TL
Maximum
75
200
260
Unit
°C/W
°C/W
°C
Rev. 20130109

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