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PDF MCR218-3 Data sheet ( Hoja de datos )
| Número de pieza | MCR218-3 | |
| Descripción | Thyristors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MCR218-3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon-Controlled Rectifiers
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass-Passivated Junctions
• Blocking Voltage to 800 Volts
• TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and
Durability
Order this document
by MCR218/D
MCR218
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-8
MCR218-10
Symbol
VDRM
VRRM
Value
50
100
200
400
600
800
Unit
Volts
Forward Current RMS
(All Conduction Angles)
IT(RMS)
8
Amps
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 80 Amps
I2t 26 A2s
Forward Peak Gate Power
PGM 5 Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Forward Peak Gate Current
IGM 2 Amps
Operating Junction Temperature Range
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR218-3.PDF ] | |
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