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Numéro de référence | MCR218-8 | ||
Description | Thyristors | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon-Controlled Rectifiers
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass-Passivated Junctions
• Blocking Voltage to 800 Volts
• TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and
Durability
Order this document
by MCR218/D
MCR218
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-8
MCR218-10
Symbol
VDRM
VRRM
Value
50
100
200
400
600
800
Unit
Volts
Forward Current RMS
(All Conduction Angles)
IT(RMS)
8
Amps
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 80 Amps
I2t 26 A2s
Forward Peak Gate Power
PGM 5 Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Forward Peak Gate Current
IGM 2 Amps
Operating Junction Temperature Range
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
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Pages | Pages 4 | ||
Télécharger | [ MCR218-8 ] |
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