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PDF MCR3835-10 Data sheet ( Hoja de datos )
| Número de pieza | MCR3835-10 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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MCR3835 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
MCR3835-1
MCR3835-2
MCR3835-3
MCR3835-4
MCR3835-5
MCR3835-6
MCR3835-7
MCR3835-8
MCR3835-9
MCR3835-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Peak non-repetitive blocking voltage(1)
MCR3835-1
MCR3835-2
MCR3835-3
MCR3835-4
MCR3835-5
MCR3835-6
MCR3835-7
MCR3835-8
MCR3835-9
MCR3835-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Forward on-state current RMS (all conduction angles)
IT(RMS)
35
Amps
Peak surge current
(one cycle, 60Hz, TJ = -40 to +125°C)
ITSM 35 Amps
Circuit fusing considerations
(TJ = -40 to +100°C, t ≤ 8.3ms)
I2t 510 A2s
Peak gate power
Average gate power
PGM
PG(AV)
5 Watts
0.5 Watts
Peak forward gate current
IGM 2 Amps
Peak gate voltage, forward or reverse
VGM 10 Volts
Operating junction temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150 °C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
1.2
Unit
°C/W
Rev. 20130118
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MCR3835-10.PDF ] | |
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