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MCR3935-8 fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence MCR3935-8
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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MCR3935-8 fiche technique
MCR3935 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
MCR3935-1
MCR3935-2
MCR3935-3
MCR3935-4
MCR3935-5
MCR3935-6
MCR3935-7
MCR3935-8
MCR3935-9
MCR3935-10
25
50
100
200
VRRM, VDRM
300 Volts
400
500
600
700
800
Peak non-repetitive reverse blocking voltage (t ≤ 5ms)
MCR3935-1
MCR3935-2
MCR3935-3
MCR3935-4
MCR3935-5
MCR3935-6
MCR3935-7
MCR3935-8
MCR3935-9
MCR3935-10
25
50
100
200
VRSM 300 Volts
400
500
600
700
800
Forward on-state current RMS (all conduction angles)
Peak surge current
(one cycle, 60Hz, TJ = -40 to +125°C)
Circuit fusing considerations
(TJ = -40 to +100°C, t ≤ 8.3ms)
Peak gate power
Average gate power
Peak forward gate current
Peak gate voltage, forward or reverse
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
35 Amps
35 Amps
510 A2s
5 Watts
0.5 Watts
2 Amps
10 Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
1.2
Unit
°C/W
Rev. 20150306

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