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Motorola Semiconductors - Silicon Controlled Rectifiers

Numéro de référence S2800F
Description Silicon Controlled Rectifiers
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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S2800F fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
Order this document
by S2800/D
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100°C, Gate Open)
F
A
B
S2800 D
M
N
Symbol
VRRM
VDRM
Value
50
100
200
400
600
800
Unit
Volts
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage(1)
S2800
F
A
B
D
M
N
VRSM
VDSM
75
125
250
500
700
900
Volts
RMS Forward Current
(All Conduction Angles)
TC = 75°C
IT(RMS)
10
Amps
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
pForward Peak Gate Power (t 10 µs)
ITSM 100 Amps
I2t 40 A2s
PGM 16 Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ –40 to +100 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

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