DataSheetWiki


S2800N fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence S2800N
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





1 Page

No Preview Available !





S2800N fiche technique
S2800 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage (1)
Symbol
Value
Unit
(TJ = 25 to 100°C, gate open)
S2800F
50
S2800A
S2800B
VRRM, VDRM
100
200
Volts
S2800D
400
S2800M
600
S2800N
Peak non-repetitive reverse voltage and non-repetitive off state voltage(1)
800
(TJ = 25 to 100°C, gate open)
S2800F
75
S2800A
S2800B
VRSM, VDSM
125
250
Volts
S2800D
500
S2800M
700
S2800N
900
Forward on-state current RMS (all conduction angles) TC = 75°C
Peak forward surge current
(one cycle, sine wave, 60Hz, TC = 80°C)
Circuit fusing considerations
(t = 8.3ms)
IT(RMS)
ITSM
I2t
10 Amps
100 Amps
40 A2s
Forward peak gate power (t ≤ 10µs)
PGM
16 Watts
Forward average gate power
PG(AV)
0.5 Watts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices
are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RѲJC
Maximum value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(VAK = VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
Instantaneous on-state voltage
(ITM = 30A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Symbol Min Typ Max Unit
IDRM - - 10 µA
- - 2 mA
VT - 1.7 2 Volts
IGT - 8 15 mA
VGT - 0.9 1.5 volts
Rev. 20130128

PagesPages 3
Télécharger [ S2800N ]


Fiche technique recommandé

No Description détaillée Fabricant
S2800 Silicon Controlled Rectifiers Motorola Semiconductors
Motorola Semiconductors
S2800A SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
Digitron Semiconductors
S2800A Silicon Controlled Rectifiers GE
GE
S2800A Silicon Controlled Rectifiers Motorola Semiconductors
Motorola Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche