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PDF MMBR2857 Data sheet ( Hoja de datos )
| Número de pieza | MMBR2857 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MMBR2857
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstq
•Thermal Resistance Junction to Ambient
Rsja
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 1.0 jitAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 10/uAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 3.0 mAdc, V C e = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 4.0 mAdc, VC e = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, El = 0, f = 0.1 MHz)
Small-Signal Current Gain
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)
Noise Figure
dC = 1.5 mAdc, V CE = 6.0 Vdc, R S = 50 n, f = 450 MHz)
Common-Emitter Amplifier Rower Gain
dC = 1.5 mAdc, Vce = 6.0 Vdc, f = 450 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
15
30
2.5
—
hFE
h
Ccb
hfe
NF
Gpe
30
1000
—
50
—
12.5
Value
15
30
2.5
40
Max
350
2.8
150
357
Max
-
.
-
-
0.05
-
-
1.0
-
4.5
—'
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
,°C/W
Vdc
Vdc
Vdc
fiAdc
-
MHz
pF
-
dB
dB
3-70
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBR2857.PDF ] | |
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