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PDF MMBR4957 Data sheet ( Hoja de datos )
| Número de pieza | MMBR4957 | |
| Descripción | RF Amplifier Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
V EB
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
T stq
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
30
30
3.0
30
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°CA/V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = 100 /xAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 100 /iAdc, lc = 0)
Collector Cutoff Current
(VcB = 1° Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
c(l = 2.0 mAdc, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
E(l = 2.0 mAdc, VcE = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 1 " Vdc, El = °- f = 10 MHz >
Common-Emitter Amplifier Power GainO)
(Vc E = 10 Vdc, lc = 2.0 mAdc, f = 450 MHz)
Noise Figured)
dC = 2.0 mAdc, Vc E 10 Vdc, f = 450 MHz)
(1) Noise figure and power gain measured on the Ailtech 7380 50 n system.
MMBR4957
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER TRANSISTOR
PNP SILICON
Symbol
v (BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
Min
30
3.0
Max
Vdc
Vdc
fiAdc
"FE
Ccb
NF
1,200
0.8
17 (Typ)
3.0 (Typ)
MHz
pF
dB
3-71
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBR4957.PDF ] | |
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