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Numéro de référence | MMBR5031 | ||
Description | RF Amplifier Transistor | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MMBR5031
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T^ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R&JA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
Ug = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(|C = 0.01 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 0-01 mAdc, cl = 0)
Collector Cutoff Current
(VCB = 6.0 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
Oc = 1.0 mAdc, Vce
6.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dp = 5.0 mAdc, Vqe = 6.0 Vdc, f
100 MHz)
Collector-Base Capacitance
(Vqe = 6.0 Vdc, El = 0, f = 0.1 MHz)
Noise Figure
Op = 1-0 mAdc, Vqe = 6.0 Vdc, f
450 MHz)
Common-Emitter Amplifier Power Gain
OC = 1-0 mAdc, Vce = 6.0 Vdc, f = 450 MHz)
(1) Noise figure and power gain measure on Ailtech 7380 50 il system.
Symbol
v (BR)CEO
v (BR)CBO
v(BR)EBO
!CBO
Min
3.0
hFE
*T
c cb
NF(1)
J pe'
1,000
. Value
10
15
3.0
20
Max
350
2.8
150
357
Max
10
300
1.5
2.5
25
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Vdc
Vdc
Vdc
nAdc
MHz
PF
dB
3-72
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Pages | Pages 1 | ||
Télécharger | [ MMBR5031 ] |
No | Description détaillée | Fabricant |
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