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PDF MMBT930 Data sheet ( Hoja de datos )
| Número de pieza | MMBT930 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
CollectorrEmitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
v CEO
v CBO
VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
"Thermal Resistance Junction to Ambient
R &JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
45
45
5.0
30
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
MMBT930
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = IQ^Adc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 10 ^Adc, lc = 0)
Collector Cutoff Current
(VCE = 5-0 Vdc, Bl = 0)
Collector Cutoff Current
(VC B = 45 Vdc, El = 0)
Collector Cutoff Current
(VC E = 45 Vdc, Vbe = 0)
Emitter Cutoff Current
(VE b = 5.0 Vdc, Iq = 0)
ON CHARACTERISTICS
DC Current Gain
C(l = 10 /xAdc, VC E = 5.0 Vdc)
dC = 500 /uAdc, Vce = 5.0 Vdc)
c(l = 10 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 0-5 mAdc)
Base-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 0-5 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
C(l = 500 MAdc, Vce = 5.0 Vdc, f = 30 MHz)
Output Capacitance
(VcB = 5.0 Vdc, l£ = 0, f =1.0 MHz)
Noise Figure
(lC
=
10 /uAdc, VC e
=
50
Vdc
'
RS
=
10 kfi '
f = 10 Hz to 15.7 kHz)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CEO
'CBO
>CES
iEBO
45
Max
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
hFE
VCE(sat)
v BE(sat)
100
150
0.6
h
^obo
NF
30
—
300
600
1.0
—
,
8.0
3.0
Vdc
Vdc
MHz
pF
dB
3-79
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBT930.PDF ] | |
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