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PDF MMBT9014C Data sheet ( Hoja de datos )
| Número de pieza | MMBT9014C | |
| Descripción | NPN Silicon Epitaxial Planar Transistors | |
| Fabricantes | HORNBY | |
| Logotipo |  |
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MMBT9014【Switching Diode / 200mW / SOT-23】
NPN Silicon Epitaxial Planar Transistors
Features
◆ Switching and AF amplifier applications
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
Ic
Power Dissipation
PD
DC Current Gain
VCE=5V, IC=2mA
VCE=5V, IC=2mA
MMBT9014B
MMBT9014C
hFE
VCE=5V, IC=2mA MMBT9014D
Collector Base Breakdown Voltage
IC=100μA
V(BR)CBO
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Saturation Voltage
Collector Cutoff Current
IC=1mA
IC=100μA
IC=100mA, IB=5mA
VCB = 50 V
V(BR)CEO
V(BR)EBO
VCEsat
ICBO
Emitter Base Cutoff Current
VEB = 5 V
IEBO
Output Capacitance
VCB=10V,f=1MHz
COB
Gain Bandwidth Product
VCE=5V, IC=10mA
fT
Noise Figure
VCE=5V, IC=200μA, f=1KHz, RG=2KΩ NF
Junction Temperature
Tj
Storage Temperature Range
TS
Min Typ Max
50
----- 45
5
-----
----- 100
-----
----- 200
-----
110 250
200 ----- 450
420 800
50
45 -----
5
----- 0.6
50
-----
50
----- 3.5
6
----- 300
-----
----- 2
10
150
-55 to +150
Unit
V
mA
mW
-----
V
nA
pF
MHz
K/W
℃
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBT9014C.PDF ] | |
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