|
|
PDF MBRB10100-M3 Data sheet ( Hoja de datos )
| Número de pieza | MBRB10100-M3 | |
| Descripción | High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBRB10100-M3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.vishay.com
MBRB1090-M3, MBRB10100-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
K
2
1
MBRB1090
MBRB10100
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV)
VRRM
IFSM
VF
TJ max.
Diode variation
10 A
90 V, 100 V
150 A
0.65 V
150 °C
Single die
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
MBRB1090 MBRB10100
90 100
90 100
90 100
10
150
10 000
- 65 to + 150
UNIT
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous
forward voltage (1)
Maximum reverse current per at working
peak reverse voltage (2)
IF = 10 A
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
IR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
Revision: 15-May-13
1 Document Number: 87981
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRB10100-M3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBRB10100-M3 | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |