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PDF MBRB10100CT Data sheet ( Hoja de datos )

Número de pieza MBRB10100CT
Descripción SCHOTTKY BARRIER RECTIFIER
Fabricantes JCET 
Logotipo JCET Logotipo



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No Preview Available ! MBRB10100CT Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10100CT SCHOTTKY BARRIER RECTIFIER
FEATURE
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
TO-263-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VRRM
VRWM
VR(RMS)
IO
IFSM
PD
RθJA
TJ
Tstg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current @8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
100
70
10
120
2
50
125
-55~+150
Unit
V
V
A
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=0.1mA
100
Reverse current
IR VR=100V
Forward voltage
VF(1)
VF(2)*
IF=5A
IF=10A
Total capacitance
*Pulse test
Ctot VR=4V,f=1MHz
Typ
90
Max
0.01
0.85
0.95
Unit
V
mA
V
V
pF
www.cj-elec.com
1
A-4,Mar,2014

1 page





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