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Numéro de référence | MBRB20150CT | ||
Description | SCHOTTKY BARRIER RECTIFIER | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB20150CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-263-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=155℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
150
105
20
180
2
50
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=1mA
150 V
Reverse current
IR VR=150V
100 μA
Forward voltage
VF1
VF2*
IF=10A
IF=20A
1V
1.2 V
Typical total capacitance
*Pulse test
Ctot VR=4V,f=1MHz
100 pF
www.cj-elec.com
1
C,Mar,2016
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Pages | Pages 4 | ||
Télécharger | [ MBRB20150CT ] |
No | Description détaillée | Fabricant |
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