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MBRB20200CT fiches techniques PDF

Thinki Semiconductor - 20.0 Ampere Surface Mount Schottky Barrier Rectifiers

Numéro de référence MBRB20200CT
Description 20.0 Ampere Surface Mount Schottky Barrier Rectifiers
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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MBRB20200CT fiche technique
MBRB2035CT thru MBRB20200CT
®
Pb Free Plating Product
MBRB2035CT thru MBRB20200CT
Pb
20.0 Ampere Surface Mount Schottky Barrier Rectifiers
Features
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds at terminals
Mechanical Data
Cases: JEDEC D2PAK /TO-263-2L molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 grams
D 2PAK
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=135oC
Peak Repetitive Forward Current (Rated VR, Square Wave,
20KHz) at Tc=135oC
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TC=25OC
IF=10A, TC=125OC
IF=20A, TC=25OC
IF=20A, TC=125OC
Maximum Instantaneous Reverse Current @ Tc=25
at Rated DC Blocking Voltage
@ Tc=125
Voltage Rate of Change, (Rated VR)
Typical Junction Capacitance
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Symbol MBRB MBRB MBRB MBRB MBRB MBRB MBRB
2035 2045 2050 2060 2090 20100 20200
CT CT CT CT CT CT CT
VRRM 35 45 50 60 90 100 200
VRMS 24 31 35 42 63 70 140
VDC 35 45 50 60 90 100 200
I(AV)
20
IFRM
20
IFSM
IRRM
1.0
150
0.5
VF
IR
dV/dt
Cj
RθJC
TJ
TSTG
-
0.57
0.84
0.72
0.1
15
400
1.0
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.1
10 5.0
10,000
320
2.0
-65 to +150
-65 to +175
0.99
0.87
1.23
1.10
Units
V
V
V
A
A
A
A
V
mA
mA
V/uS
pF
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/

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