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AO3401 fiches techniques PDF

HOTTECH - P-Channel MOSFET

Numéro de référence AO3401
Description P-Channel MOSFET
Fabricant HOTTECH 
Logo HOTTECH 





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AO3401 fiche technique
FEATURES
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V.
This device is suitable for use as a load switch
or in PWM applications.
D
G
S
Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
T =70°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
I
IDM
PD
TJ, TSTG
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ Max
65 90
85 125
43 60
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1

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