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Numéro de référence | AO3409 | ||
Description | 30V P-Channel Enhancement Mode MOSFET | ||
Fabricant | JinYu | ||
Logo | |||
1 Page
30V P-Channel Enhancement Mode MOSFET
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130m (VGS = -10V)
RDS(ON) < 200m (VGS = -4.5V)
AO3409
SOT-23-3L
D
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.65 2.95
1.50 1.70
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Power Dissipation
TA=25
TA=70
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, TSTG
Rating
-30
20
-2.6
-2.2
-20
1.4
1
100
63
-55 to 150
Unit
V
V
A
W
/W
/W
JinYu
semiconductor
www.htsemi.com
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Pages | Pages 4 | ||
Télécharger | [ AO3409 ] |
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