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BT138-600F fiches techniques PDF

Inchange Semiconductor - Triacs

Numéro de référence BT138-600F
Description Triacs
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BT138-600F fiche technique
INCHANGE Semiconductor
isc Triacs
isc Product Specification
BT138-600F
FEATURES
·With TO-220 package
·Glass passivated triacs in a plastic
envelope, Intended for use in general
purpose bidirectional switching and
phase control applications, where
high sensitivity is required in all four
quadrants.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDRM
VRRM
IT(RMS)
ITSM
PGM
PG(AV)
Tj
Tstg
Repetitive peak off-state voltage
Repetitive peak off-state voltage
RMS on-state current (full sine wave)
Non-repetitive peak on-state current
Peak gate power dissipation
Average gate power dissipation
Operating junction temperature
Storage temperature
MIN
600
600
12
83
5
0.5
110
-45~150
UNIT
V
V
A
A
W
W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110
VD=VDRM,
VD=VDRM, Tj=110
IGT Gate trigger current
VD=12V; IT= 0.1A, RL= 30Ω
VTM On-state voltage
IH Holding current
VGT Gate trigger voltage
IT= 15A
IGT= 0.1A, VD= 12V
VD=12V; RL= 30Ω all quadrant
MIN MAX UNIT
0.02
0.5
mA
0.02
0.5
mA
25
25
mA
25
100
1.65 V
35 mA
1.5 V
isc websitewww.iscsemi.cn

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