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3CG953M fiches techniques PDF

LZG - SILICON PNP TRANSISTOR

Numéro de référence 3CG953M
Description SILICON PNP TRANSISTOR
Fabricant LZG 
Logo LZG 





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3CG953M fiche technique
2SA953M(3CG953M)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频放大、激励级放大。/Purpose: Audio frequency amplifier and driver stage.
特点:集电极耗散功率大,hFE 高,VCEO 高。/Features: High total power dissipation, high hFE and
high VCEO.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -60 V
VCEO -60 V
VEBO
-5.0
V
IC
-300
mA
IB -60 mA
PC 450 mW
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Electrical characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test condition
最小值
Min
数值
Rating
典型值
Typ
ICBO VCB=-60V
IE=0
IEBO VEB=-5.0V
IC=0
hFE(1)
VCE=-1.0V
IC=-50mA
90
hFE(2)
VCE=-1.0V
IC=-300mA
30
VCE(sat)
IC=-300mA
IB=-30mA
-0.15
VBE(sat)
IC=-300mA
IB=-30mA
-0.85
VBE VCE=-6.0V
IC=-10mA
-0.66
fT VCE=-6.0V
IC=-10mA
50
100
Cob VCB=-6.0V IE=0 f=1.0MHz
hFE 分档、印章/hFE Classifications、Marking:
hFE 分档
hFE Classifications
hFE 范围
hFE Range
M
90~180
印章
Marking
H53M
13
L
135~270
H53L
最大值
Max
-0.1
-0.1
400
单位
Unit
μA
μA
-0.60
-1.20
-0.70
25
V
V
V
MHz
pF
K
200~400
H53K
http://www.lzg.so

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