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PDF XN05531G Data sheet ( Hoja de datos )
| Número de pieza | XN05531G | |
| Descripción | Silicon NPN epitaxial planar type Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05531G
Silicon NPN epitaxial planar type
For high-frequency / oscillation / mixing
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SC3130 × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
15
10
3
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Package
Code
Mini6-G3
Pin Name
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Marking Symbol: 5M
Internal Connection
(B2) (B1) (E1)
456
Tr2 Tr1
321
(C2) (E2) (C1)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
hFE ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICBO
ICEO
hFE
hFE(Small/
Large) *1
∆hFE *2
VCE(sat)
fT
Cob
IC = 2 mA, IB = 0
IE = 10 mA, IC = 0
VCB = 10 V, IE = 0
VCE = 10 V, IB = 0
VCE = 4 V, IC = 5 mA
VCE = 4 V, IC = 5 mA
hFE2 = VCE = 4 V, IC = 100 mA
hFE1 = VCE = 4 V, IC = 5 mA
IC = 20 mA, IB = 4 mA
VCB = 4 V, IE = -5 mA, f = 200 MHz
VCB = 4 V, IE = 0, f = 1 MHz
10
3
1
10
75 200 400
0.5 0.99
0.75
0.75
1.4 1.9
1.6
1.6
0.5
2.5
0.9 1.1
Reverse transfer capacitance
(Common base)
Crb VCB = 4 V, IE = 0, f = 1 MHz
0.25 0.35
Collector-base parameter
rbb'・CC VCB = 4 V, IE = -5 mA, f = 30 MHz
11.8 13.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
*2: ∆hFE = hFE2 / hFE1
Unit
V
V
mA
mA
V
GHz
pF
pF
ps
Publication date: March 2009
SJJ00452AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XN05531G.PDF ] | |
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