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Numéro de référence | 2SC4081 | ||
Description | NPN Transistor | ||
Fabricant | JCET | ||
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1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC4081 TRANSISTOR (NPN)
FEATURES
z Excellent hFE linearity
z Complements the 2A1576A
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=7V,IC=0
hFE(1) VCE=6V,IC=1mA
VCE(sat) IC=50mA,IB=5mA
fT VCE=12V,IC=2mA,f=30MHz
Cob VCB12V,IE=0,f=1MHz
Min Typ
60
50
7
120
180
Max Unit
V
V
V
0.1 μA
0.1 μA
560
0.4 V
MHz
3.5 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
A,May,2011
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Pages | Pages 2 | ||
Télécharger | [ 2SC4081 ] |
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