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Numéro de référence | 2SD596 | ||
Description | NPN Plastic Encapsulated Transistor | ||
Fabricant | SeCoS | ||
Logo | |||
1 Page
Elektronische Bauelemente
2SD596
0.7A , 30V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current gain
Complementary to 2SB624
MARKING
DV4
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
F
REF.
A
B
C
D
E
F
D
GH
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
5
700
200
150, -55~150
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
25
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 µA VCB=30V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 µA VEB=5V, IC=0
DC Current Gain 1
hFE (1) 200 - 320
hFE (2) 50 -
-
VCE=1V, IC=100mA
VCE=1V, IC=700mA
Collector to Emitter Saturation Voltage 1
VCE(sat)
-
- 0.6 V IC=700mA, IB=70mA
Base to Emitter Saturation Voltage 1
VBE 0.6 - 0.7 V VCE=6V, IC=10mA
Transition Frequency
fT 170 - - MHz VCE=6V, IC=10mA
Collector output capacitance
Cob - 12 - pF VCB=6V, IE=0, f=10MHZ
Note:
1. Pulse width≦350µs, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 3
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Pages | Pages 3 | ||
Télécharger | [ 2SD596 ] |
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