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Rectron - BIPOLAR TRANSISTORS

Numéro de référence 2SD596
Description BIPOLAR TRANSISTORS
Fabricant Rectron 
Logo Rectron 





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2SD596 fiche technique
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SD596
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.7 A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 100mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage (IE= 100mA, IC=0)
Collector cut-off current (VCB= 30V, IE=0)
V(BR)EBO
ICBO
Emitter cut-off current (VEB= 5V, IC=0)
IEBO
DC current gain (VCE= 1V, IC= 100mA)
DC current gain (VCE= 1V, IC= 700mA)
Collector-emitter saturation voltage (IC= 700mA, IB= 70mA)
hFE(1) *
hFE(2) *
VCE(sat)*
Base-emitter voltage (VCE= 6V, IC= 10mA)
VBE(on) *
Transition frequency (VCE= 6V, IC= 10mA)
fT
* Pulse teat: Pulse width <350ms, Duty Cycle <2%.
CLASSIFICATION OF hFE
RANK
Range
DV1
110-180
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN TYP
30 -
25 -
5-
--
--
110 -
50 -
--
0.6 -
140 -
MAX
-
-
-
0.1
0.1
400
-
0.6
0.7
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
2006-3

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