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PDF BCW29 Data sheet ( Hoja de datos )
| Número de pieza | BCW29 | |
| Descripción | SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW29 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BCW29
BCW30
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW29 = C1
BCW30 = C2
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C
–IC = 2 mA; –VCE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–Ic = 200 mA; –VCE = 5 V;
f = 1 kHz; B = 200 Hz
hFE
–VCB0
–VCE0
–ICM
Ptot
Tj
BCW29
> 120
< 260
max.
max.
max.
max,
max.
BCW30
215
500
32 V
32 V
200 mA
250 mW
150 ° C
fT typ.
150 MHz
F<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BCW29.PDF ] | |
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