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PDF STP6N62K3 Data sheet ( Hoja de datos )
| Número de pieza | STP6N62K3 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STF6N62K3, STFI6N62K3, STI6N62K3,
STP6N62K3, STU6N62K3
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power
MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
Datasheet − production data
Features
TAB
Order codes
STF6N62K3
STFI6N62K3
STI6N62K3
STP6N62K3
STU6N62K3
VDSS RDS(on) max. ID
620 V < 1.2 Ω 5.5 A
PTOT
30 W
30 W
90 W
90 W
90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
3
2
1
TO-220FP
TAB
3
2
1
TO-220
123
I²PAK
1
23
I²PAK FP
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
STF6N62K3
STFI6N62K3
STI6N62K3
STP6N62K3
STU6N62K3
Marking
6N62K3
G(1)
Package
TO-220FP
I²PAKFP
I²PAK
TO-220
IPAK
S(3)
AM01476v1
Packaging
Tube
August 2012
This is information on a product in full production.
Doc ID 14676 Rev 4
1/19
www.st.com
19
1 page  
STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 310 V, ID = 2.75 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
22 ns
12 ns
--
49 ns
20 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
5.5 A
-
27 A
VSD (2) Forward on voltage ISD = 5.5 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
290
ISD = 5.5 A, di/dt = 100 A/µs - 1.9
VDD = 60 V (see Figure 24)
13.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.5 A, di/dt = 100 A/µs
335
VDD = 60 V, Tj = 150 °C
- 2.4
(see Figure 24)
14.5
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage (ID = 0)
Igs=± 1 mA
Min. Typ. Max. Unit
30 - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components
Doc ID 14676 Rev 4
5/19
5 Page 
STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3
Figure 25. TO-220FP drawing
Package mechanical data
Doc ID 14676 Rev 4
7012510_Rev_K_B
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STP6N62K3.PDF ] | |
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