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What is MCD200-18io1?

This electronic component, produced by the manufacturer "IXYS", performs the same function as "Thyristor / Diode Module".


MCD200-18io1 Datasheet PDF - IXYS

Part Number MCD200-18io1
Description Thyristor / Diode Module
Manufacturers IXYS 
Logo IXYS Logo 


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Total 6 Pages



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No Preview Available ! MCD200-18io1 datasheet, circuit

Thyristor \ Diode Module
Phase leg
Part number
MCD200-18io1
3 1 5 42
MCD200-18io1
VRRM
I TAV
VT
= 2x 1800 V
= 216 A
= 1.1 V
Backside: isolated
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: Y4
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b

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MCD200-18io1 equivalent
MCD200-18io1
Thyristor
8000
6000
ITSM
4000
[A]
2000
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 125°C
106
I2dt
105
[A2s]
TVJ = 45°C
TVJ = 125°C
400
300
ITAVM
200
[A]
100
DC
180° sin
120°
60°
30°
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current ITSM,
IFSM: Crest value, t: duration
104
1
10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
400
300
Ptot
200
[W]
100
DC
180° sin
120°
60°
30°
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
0
0 100 200 300 0 25 50 75 100 125 150
ITAVM [A]
Ta [°C]
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
10 1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
6
5
4
IGD, TVJ = 130°C
0.1
10-3 10-2 10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100 101 102
IG [A]
Fig. 5 Gate trigger characteristics
2000
1600
1200
Ptot
[W] 800
400
RthKA K/W
0.02
0.04
0.06
0.10
0.15
0.20
0.30
0
0 200 400 600 0 25 50 75 100 125 150
IdAVM [A]
T a [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
100
TVJ = 25°C
tgd 10
[ s]
1
limit
typ.
0.01
0.1
1
IG [A]
10
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
MCD200-18io1The function is Thyristor / Diode Module. IXYSIXYS

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