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Numéro de référence | L8050 | ||
Description | TO-92 Plastic-Encapsulate Transistors | ||
Fabricant | LRC | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8050 TRANSISTOR˄ NPN˅
FEATURES
Power dissipation
PCM : 1 W ˄Tamb=25ć˅
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
˄ ćELECTRICAL CHARACTERISTICS Tamb=25
unless
üTO 92
1.EMITTER
2.BASE
3. COLLECTOR
123
˅otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A ˈ IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 Aˈ IC=0
5
V
Collector cut-off current
ICBO VCB= 40 V , IE=0
0.1 A
Collector cut-off current
ICEO VCE= 20 V , IB=0
0.1 A
Emitter cut-off current
IEBO VEB= 5 V , IC=0
0.1 A
DC current gain
hFE˄1˅
hFE˄2˅
VCE= 1 V , IC= 100 mA
VCE= 1 V , IC=800 mA
85
40
300
Collector-emitter saturation voltage
VCE(sat)
IC= 800 mA, IB= 80 mA
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC= 800mA, IB= 80 mA
1.2 V
Transition frequency
VCE= 10 V, IC= 50mA
fT
f =30 MHz
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
L8050-1/3
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Pages | Pages 3 | ||
Télécharger | [ L8050 ] |
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