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Numéro de référence | BZW03C62 | ||
Description | Silicon Z-Diodes and Transient Voltage Suppressors | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
BZW03C...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D Glass passivated junction
D Hermetically sealed package
D Clamping time in picoseconds
Applications
Voltage regulators and transient suppression circuits
94 9588
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm, TL=25°C
Tamb=45°C
tp=100ms, Tj=25°C
Type
Symbol
PV
PV
PZRM
PZSM
Tj
Tstg
Value
6.0
1.85
20
1000
175
–65...+175
Unit
W
W
W
W
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient l=25mm, TL=constant
on PC board with spacing 37.5mm
Symbol
RthJA
RthJA
Value
30
70
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=1A
Type
Symbol Min Typ Max Unit
VF 1.2 V
Document Number 85602
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
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Pages | Pages 5 | ||
Télécharger | [ BZW03C62 ] |
No | Description détaillée | Fabricant |
BZW03C62 | Silicon Z-Diodes and Transient Voltage Suppressors | Vishay Telefunken |
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