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Numéro de référence | BUZ12 | ||
Description | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1 Page
SIPMOS ® Power Transistor
BUZ 12
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 12
VDS
50 V
ID
42 A
RDS(on)
0.028 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 65 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25 Ω
L = 23.2 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1331-A2
Values
42
168
42
2.5
Unit
A
mJ
41
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
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Pages | Pages 9 | ||
Télécharger | [ BUZ12 ] |
No | Description détaillée | Fabricant |
BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET | STMicroelectronics |
BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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