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BUZ205 fiches techniques PDF

Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

Numéro de référence BUZ205
Description SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BUZ205 fiche technique
SIPMOS® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0
Package 1)
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, TC = 35 ˚C
Pulsed drain current, TC = 25 ˚C
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Power dissipation, TC = 25 ˚C
Operating and storage temperature range
Symbol
ID
ID puls
VDS
VDGR
VGS
Ptot
Tj , Tstg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Rth JC
Ordering Code
C67078-A1401-A2
Values
6.0
24
400
400
± 20
75
– 55 ... + 150
1.67
E
55/150/56
Unit
A
V
W
˚C
K/W
1) See chapter Package Outlines.
Semiconductor Group
508

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