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Numéro de référence | BUZ205 | ||
Description | SIPMOS Power Transistor (N channel Enhancement mode FREDFET) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1 Page
SIPMOS® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1)
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, TC = 35 ˚C
Pulsed drain current, TC = 25 ˚C
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Power dissipation, TC = 25 ˚C
Operating and storage temperature range
Symbol
ID
ID puls
VDS
VDGR
VGS
Ptot
Tj , Tstg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Rth JC
Ordering Code
C67078-A1401-A2
Values
6.0
24
400
400
± 20
75
– 55 ... + 150
≤ 1.67
E
55/150/56
Unit
A
V
W
˚C
K/W
–
1) See chapter Package Outlines.
Semiconductor Group
508
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Pages | Pages 6 | ||
Télécharger | [ BUZ205 ] |
No | Description détaillée | Fabricant |
BUZ20 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ20 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
BUZ20 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ201 | main ratings | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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