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Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Numéro de référence BUZ22
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BUZ22 fiche technique
BUZ 22
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 22
VDS
100 V
ID
34 A
RDS(on)
0.055
Maximum Ratings
Parameter
Continuous drain current
TC = 27 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 34 A, VDD = 25 V, RGS = 25
L = 285.5 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1333-A2
Values
34
136
34
15
Unit
A
mJ
220
± 20
125
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

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