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PDF BT138X-600F Data sheet ( Hoja de datos )
| Número de pieza | BT138X-600F | |
| Descripción | Triacs | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Triacs
Product specification
BT138X series
GENERAL DESCRIPTION
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT138X-
BT138X-
BT138X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
12
95
600
600F
600G
600
12
95
800
800F
800G
800
12
95
V
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Ths ≤ 56 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
12
95
105
45
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
1 page  
Philips Semiconductors
Triacs
Product specification
BT138X series
IGT(Tj)
IGT(25 C)
3
2.5
2
BT138
T2+ G+
T2+ G-
T2- G-
T2- G+
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0 50 100 150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
40 IT / A
Tj = 125 C
Tj = 25 C
30 Vo = 1.175 V
Rs = 0.0316 Ohms
20
BT138
typ
max
10
0
0 0.5 1 1.5 2 2.5 3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-hs (K/W)
BT138
with heatsink compound
without heatsink compound
1
unidirectional
bidirectional
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
1000 dV/dt (V/us)
100
off-state dV/dt limit
BT138...G SERIES
BT138 SERIES
BT138...F SERIES
dIcom/dt =
15 A/ms 12 9.1 7 5.4 4.2
10
1
0 50 100 150
Tj / C
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
September 1997
5
Rev 1.200
5 Page | ||
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| PDF Descargar | [ Datasheet BT138X-600F.PDF ] | |
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