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NXP Semiconductors - Triacs high noise immunity

Numéro de référence BT139B-800H
Description Triacs high noise immunity
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BT139B-800H fiche technique
Philips Semiconductors
Triacs
high noise immunity
Product specification
BT139B series H
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
applications requiring high noise
immunity in addition to high,
bidirectional blocking voltage
capability and thermal cycling
performance. Typical applications
include motor control, industrial
lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT139B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500H 600H 800H
500 600 800
16 16 16
140 140 140
V
A
A
PINNING - SOT404
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
PIN CONFIGURATION
mb
2
13
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tmb 99 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.000

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