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BT300X-600R fiches techniques PDF

NXP Semiconductors - Thyristors

Numéro de référence BT300X-600R
Description Thyristors
Fabricant NXP Semiconductors 
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BT300X-600R fiche technique
Philips Semiconductors
Thyristors
Product specification
BT300X series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT300X-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
555
888
65 65 65
V
A
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Ths 79 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
5
8
65
71
21
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100

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