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Datasheet BFR90-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BFR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BFR106 | NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106 NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f  NXP Semiconductors transistor | | |
| 2 | BFR106 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) BFR 106
NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin  Siemens Semiconductor Group transistor | | |
| 3 | BFR106 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta  Infineon Technologies AG transistor | | |
| 4 | BFR106 | Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB New Jersey Semiconductor data | | |
| 5 | BFR14B | NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz Siemens Semiconductor Group transistor | | |
| 6 | BFR14C | NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz Siemens Semiconductor Group transistor | | |
| 7 | BFR180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | |
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