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Motorola Inc - RF TRANSISTORS NPN SILICON

Numéro de référence BFR93ALT1
Description RF TRANSISTORS NPN SILICON
Fabricant Motorola Inc 
Logo Motorola  Inc 





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BFR93ALT1 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BFR93ALT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and
microwave amplifiers constructed with thick and thin–film circuits using surface
mount components.
T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (2)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
12
15
2.0
35
150
0.306
4.08
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Symbol
Tstg
RθJC
Max
– 55 to +150
245
Unit
°C
°C/W
DEVICE MARKING
BFR93ALT1 = R2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mA)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 10 µA)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IC = 100 µA)
V(BR)EBO
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
ICEO
ICBO
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 30 mA, VCE = 5.0 V)
hFE
Collector–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
VBE(sat)
NOTES:
1. Pulse Width 300 µs, Duty Cycle 2.0%.
2. Case temperature measured on collector lead immediately adjacent to body of package.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
BFR93ALT1
RF TRANSISTORS
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
Min Max Unit
12 — Vdc
15 — Vdc
2.0 — Vdc
— 50 nA
— 50 nA
40 — —
— 0.5 Vdc
— 1.2 Vdc
BFR93ALT1
1

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