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Número de pieza | BFR93AW | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFR93AW (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• For low distortion amplifiers and
oscillators up to 2 GHz at collector currents from
5 mA to 30 mA
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFR93AW
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR93AW
Marking
Pin Configuration
R2s 1=B 2=E 3=C
Package
SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 108 °C
Junction temperature
Ambient temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
12
20
20
2
90
9
300
150
-65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
140
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2014-04-04
1 page Package SOT323
BFR93AW
5 2014-04-04
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFR93AW.PDF ] |
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