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Infineon Technologies AG - NPN Silicon RF Transistor

Numéro de référence BFR949
Description NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFR949 fiche technique
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
 fT = 9 GHz
F = 1 dB at 1 GHz
3
BFR949F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949F
Marking
RKs
Pin Configuration
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS  93°C
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
10
20
20
1.5
35
4
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
225
Unit
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jan-04-2002

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