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Numéro de référence | BFR949 | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1 dB at 1 GHz
3
BFR949F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949F
Marking
RKs
Pin Configuration
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 93°C
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
10
20
20
1.5
35
4
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
225
Unit
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jan-04-2002
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Pages | Pages 4 | ||
Télécharger | [ BFR949 ] |
No | Description détaillée | Fabricant |
BFR949 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR949F | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR949L3 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR949T | NPN Silicon RF Transistor | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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