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Infineon Technologies AG - NPN Silicon RF Transistor

Numéro de référence BFS17S
Description NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFS17S fiche technique
NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
BFS17S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
BFS17S
4
5
6
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17S
Marking
Pin Configuration
Package
MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation1)
TS 93 °C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
Ptot
TJ
TA
TStg
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
240
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-07-20

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