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Numéro de référence | BFS17S | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• BFS17S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
BFS17S
4
5
6
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17S
Marking
Pin Configuration
Package
MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation1)
TS ≤ 93 °C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
Ptot
TJ
TA
TStg
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
≤ 240
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-07-20
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Pages | Pages 7 | ||
Télécharger | [ BFS17S ] |
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