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PDF BLV30 Data sheet ( Hoja de datos )
| Número de pieza | BLV30 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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BLV30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV30 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• PG = 10 dB at 2.0 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.5 A
VCBO
60 V
VCEO
30 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
15.9 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
D
BS
S
G
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCEO
IC = 50 mA
BVEBO
IE = 4.0 mA
ICBO
VCB = 30 V
hFE VCE = 25 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
60
30
4.0
4.0
15 120
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
10 pF
PG
IMD1
VCE = 25 V
POUT = 2.0 W
IC = 410 mA
f = 860 MHz
10
-60
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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| PDF Descargar | [ Datasheet BLV30.PDF ] | |
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