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Numéro de référence | BDW23 | ||
Description | Hammer Drivers/ Audio Amplifiers Applications | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
VCEO
Collector-Emitter Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
45
60
80
100
5
6
8
0.2
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Pages | Pages 5 | ||
Télécharger | [ BDW23 ] |
No | Description détaillée | Fabricant |
BDW21 | Bipolar NPN Device | Seme LAB |
BDW21C | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Seme LAB |
BDW22 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | Seme LAB |
BDW23 | NPN SILICON POWER DARLINGTONS | Power Innovations Limited |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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