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Datasheet BDX33B-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


BDX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BDX10Bipolar NPN Device

BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.19
Seme LAB
Seme LAB
data
2BDX11Bipolar NPN Device

BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB
data
3BDX12Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB
data
4BDX14PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: • LF Larg
Seme LAB
Seme LAB
transistor
5BDX14ASilicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) APPLICATIONS ·Designed for LF Large Signal Power Amplification and Medium Current Switching
Inchange Semiconductor
Inchange Semiconductor
transistor
6BDX14APNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: • LF Larg
Seme LAB
Seme LAB
transistor
7BDX14AAPNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: • LF Larg
Seme LAB
Seme LAB
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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