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Infineon Technologies AG - Silicon N-Channel MOSFET Tetrode

Numéro de référence BF1005SW
Description Silicon N-Channel MOSFET Tetrode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BF1005SW fiche technique
BF1005S...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5 V
Integrated biasing network
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1005S
BF1005SR
BF1005SW
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
2=S 3=G1 4=G2 -
-
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF1005S, BF1005SR
TS 94 °C, BF1005SW
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
25
10
3
200
200
-55 ... 150
150
Marking
NZs
NZs
NZ
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004

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BF1005S Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens Semiconductor Group
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BF1005S Silicon N-Channel MOSFET Tetrode Infineon Technologies AG
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BF1005SR Silicon N-Channel MOSFET Tetrode Infineon Technologies AG
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BF1005SW Silicon N-Channel MOSFET Tetrode Infineon Technologies AG
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