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PDF BF543 Data sheet ( Hoja de datos )
| Número de pieza | BF543 | |
| Descripción | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Silicon N Channel MOS FET Triode
Preliminary Data
q For RF stages up to 300 MHz
preferably in FM applications
q IDSS = 4 mA, gfs = 12 mS
BF 543
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BF 543
Marking
LDs
Ordering Code
(tape and reel)
Q62702-F1372
Pin Configuration
123
GDS
Package1)
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, TA ≤ 60 ˚C
Storage temperature range
Channel temperature
Ambient temperature range
Symbol
VDS
ID
± IGSM
Ptot
Tstg
Tch
TA
Values
Unit
20 V
30 mA
10
200 mW
– 55 … + 150 ˚C
150
– 55 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤ 450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
1 page  
Gate 1 transconductance y21s
VDS = 10 V, IDSS = 4 mA, VGS = 0
(source circuit)
BF 543
Output admittance y22s
VDS = 10 V, IDSS = 10 mA, VGS = 0
(source circuit)
Test circuit for power gain Gp and noise figure F
f= 200 MHz, GG = 2 mS, GL = 0.5 mS
Semiconductor Group
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BF543.PDF ] | |
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