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Infineon Technologies AG - Silicon N-Channel MOSFET Tetrode

Numéro de référence BF998W
Description Silicon N-Channel MOSFET Tetrode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BF998W fiche technique
BF998...
Silicon N_Channel MOSFET Tetrode
Short-channel transistor
with high S / C quality factor
For low-noise, gain-controlled
input stage up to 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF998
BF998R
BF998W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
2=S 3=G1 4=G2 -
-
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
TS 76 °C, BF998, BF998R
TS 94 °C, BF998W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point1)
BF998, BF998R
BF998W
Symbol
VDS
ID
±IG1/2SM
Ptot
Tstg
Tch
Symbol
Rthchs
Value
12
30
10
200
200
-55 ... 150
150
Value
370
280
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
MOs
MRs
MR
Unit
V
mA
°C
Unit
K/W
1 Feb-13-2004

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